非致冷紅外探測材料InGaAs的生長和性質研究.pdf

1、中國科學院研究生院（長春光學精密機械與物理研究所）博士學位論文非致冷紅外探測材料InGaAs的生長和性質研究姓名：繆國慶申請學位級別：博士專業(yè)：凝聚態(tài)物理指導教師：金億鑫20030101竺里晝望!：蘭些絲苧；堇絲堡竺鹽堡塑塑塑!!!!坐塑生【三塑生墮業(yè)蘭三InvestigationonGrowthandCharacterizationofInGaAsforUncooledInfraredDetectorandFocusPlaneArra

2、yMiaoGuoqing(CondensedStatePhysics)DirectedbyProfessorJinYixinAbstractUncooledinffareddetectorsandarraysareoneofthemostimportantdevelopmentsintheinfrareddetectionInxGalxAsternaryalloyhasbeenofgreatinterestforshortwavelen

3、gthinfrareddetectorapplicationThex=053InxGalxAsalio)rislatticematchedtoInPsubstrateandcoversthewavelengthrangefrom09to17HITIAtpresent，InGaAsisbecomingthebestchoiceforroomtemperatureoperationinthe13nmspectrumTheimagingand

4、spectroscopyarethemajorapplicationsofInGaAsfocalplanearra3’Inthisthesis、InxOalxAs／InPheterostructurewasgrownbylowpressuremetalorganicchemicalvapordeposition(LPMOCVD)techniqueTheLPMOCVDsystemwasmadebyourgroupThegrowthandc

5、haracterizationofIno53Ga()47AsternaryalloywerestudiedindetailTheexperimentsshow：Growthtemperatureisoneofthekeygrowthparameterbywhichthesurfacemorphologyalloycomposition，crystallinequality，mobilityandcarrierconcentrationa

6、reinfluencedThehighqualityIn0s3Ga047Ascanbeobtainedintherangeof630。C650℃ThesurfacemorphologyisgreatlyinfluencedbyV／IIlratioincreasingV／IIlratioisofgreatadvantagetoobtainhighqualityofIno53Gao47AsThemobilityofInGaAsepilaye

7、rincreaseswhenincreasingtheV／II]ratioTheintrinsiccarrierconcentrationreduceswhendecreasingtheV／IIIratioThehighqualityofIno53Gao47Ascarlbeobtainedattherangeof1030secondsofexchangetimebetweenAsH3andPH3Whenthethicknessofthe