激光照射下SiC晶須原位生長(zhǎng)的研究.pdf

1、南京航空航天大學(xué)碩士學(xué)位論文激光照射下SiC晶須原位生長(zhǎng)的研究姓名：楊亮申請(qǐng)學(xué)位級(jí)別：碩士專(zhuān)業(yè)：機(jī)械制造及其自動(dòng)化指導(dǎo)教師：趙劍峰20081201激光照射下 SiC 晶須原位生長(zhǎng)的研究 II Abstract Laser, as a kind of h

2、eat resource, had been used to synthesize nano- materials in the past years because of its instant nonequilibrium output of energy and its speedy heating capability. Because the energy density of laser taken on the gradi

3、ent distribution in the three dimensional space, so that the abundant conditions to synthesize materials can be created. In-situ growth of SiC nano-whiskers by direct laser irradiation on SiC nano-particles was investiga

4、ted in this paper. Steady growth conditions and growth process of SiC whiskers by laser irradiation were researched. The main work accomplished and conclusions got are presented as follows: 1. Growth stage of SiC whisker

5、 was studied. The mechanism and mass transfer mechanism of in-situ growth of SiC whisker by laser irradiation were analyzed. 2. Growth process of whisker was analyzed in terms of crystal growth kinetics. And the growth l

6、ocation and direction of secondary nucleation were researched. 3. The experiment of laser irradiation was made out with the method that the laser and irradiating surface are upright. The microstructures of the sample pre

7、pared by laser irradiation were studied in detail with scanning electron microscopy. The stable growth conditions of whisker were studied. 4. According to whisker in samples with different blinders, the effect of laser e