la0.67ca0.33mn1xfexo3薄膜的制備及物性分析

1、河北工業(yè)大學(xué)碩士學(xué)位論文La0.67Ca0.33Mn1-xFexO3薄膜的制備及物性分析姓名：王永忠申請學(xué)位級(jí)別：碩士專業(yè)：材料物理與化學(xué)指導(dǎo)教師：唐成春2011-03La0.67Ca0.33Mn1-xFexO3 薄膜的制備及物性分析IITHE THE THE THE PREPARATION PREPARATION PREPARATION PREPARATIONAND AND AND AND PHYSICAL PHYSICAL PHYS

2、ICAL PHYSICAL PROPERTIES PROPERTIES PROPERTIES PROPERTIESOF OF OF OFLA LA LA LA0.67 0.67 0.67 0.67CA CA CA CA0.33 0.33 0.33 0.33MN MN MN MN1-X 1-X 1-X 1-XFE FE FE FEX X X XO O O O3 3 3 3FILMS FILMS FILMS FILMSABSTRACT AB

3、STRACT ABSTRACT ABSTRACTPerovskite-type manganese oxide has CMR etc. physical properties andits great application potential ,so it has been studied extensively.In this paper, solidstate reaction method were preparaed for

4、 La0.67Ca0.33Mn1-xFexO3 solid targets.XRDshowed that the targets are homogenous phase and typical perovskite-Typestructure and show sigle phase , space group Pnma.The calculation of rA is lessthan the average radius of t

5、he distortion threshold, so targets are orthorhombicstructure. Film samples are depodited on the LAO (100), MgO (100) by radiofrequency magnetron sputtering instrument, the work of the main parameters : thesubstrate temp

6、erature was 780 ℃, the oxygen argon ratio of 4:1, Sputtering powerof 200W.Then they are annealed in900 ℃ under O2 to eliminate the inner stress.La0.67Ca0.33Mn0.9Fe0.1O3/LAO thin films may occur in antiferromagneticphase,

7、 thus affecting the film sample magnetization and resistivity properties.For the film La0.67Ca0.33MnO3/LAO, La0.67Ca0.33MnO3/MgO, theelectrical transport properties refect Metal-Semiconductor transaction (mark thetempera

8、ture as TMS) in zero and five field. In the five Tesla, the double-exchangeinteraction is enhanced ,leading to ascension of resistance . The incorporation of acertain amount of Fe, regardless of LAO substrate or MgO subs

9、trates comparedwith the undoped samples, the resistivity the film La0.67Ca0.33Mn0.9Fe0.1 haveincreased significantly, meanwhile TMS has dropped significantly.Finally, we have studied infrared absorption spectra of the fi

10、lms andobserved the vibration peak of the corresponding external model (EM), bendingmode vibration peak (BM) and the stretching mode vibration peak (SM) . WeObtained the carrier number of samples by K-K transformation .I