長波長半導體高速激光器研制.pdf

1、電子科技大學碩士學位論文長波長半導體高速激光器研制姓名：王勇申請學位級別：碩士專業(yè)：微電子學與固體電子學指導教師：謝孟賢2002.1.1Abstractinthispaper，thel’esearchpl‘ocessingof131JInInGaAsPhighspeedsemiconductorlasersisdiscussedspeciallyWefocusOilthedesignofparametel。andstlnctul’eof

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3、flu‘esholdcⅡrl‘entdensityouqmtpower、antimodulationbandwidth，Wegettileoptimumstluclureandtechnologypal。anleters。Toreducetheparasiticcapacitanceandresistance，wellaveadoptedsemiinsulatingbut‘ledplanerheterojunctionimplement

4、edtiletwo—stepMOCVDstrained—layel‘multi—quantumwellisfabl‘teated，theactiveaverinelude6wellsand5barriers，eachwetlthickness7nln，wavelengthiSI3恥ill，compt‘essivestrata1％：eachbat‘磚el‘thickness811111)wavclenglhis1iUinlwaveguid

5、elayel’fllicknessionmtilesamewavelengthasbarltel’la3，el’Wehavedesignedamodulationsignalinputpathandaresistancematchingcil‘culttoimpl‘ovethemodulationbandwidthoflhedevice。Tilethresholdcrdcrel|toftiledeviceiSlessthan20tuA，

6、all(1themodulationbandwM|hisabout5GHzFinally，Wediscusslheineasnl’clnentresultsandgivesonicadvisestoilnprovefilepel‘formani：eoftiledevice。Keyword#lligh—speedsenliconthlctol‘lasersthresholdcurl‘elltdensity，sil’ainedlayel’M