介質材料電噪聲測試技術及其應用研究.pdf

1、西安電子科技大學碩士學位論文介質材料電噪聲測試技術及其應用研究姓名：王棟申請學位級別：碩士專業(yè)：材料科學與工程指導教師：杜磊20080101AbstractWithindepthstudyofthenoisetheoryitwasfoundthatlowfrequencynoisecanbeasensitivereflectionofinternaldefectsinelectroniccomponents，includingmater

2、ialdefectandpotentialdefectsinthedeviceduringmanufactureoroperation，thefailureofmostelectroniccomponentsiscausedbythosedefects，thereforemeasurementoflowfrequencynoiseofelectronicdevicesCallreflectitsintrinsicqualityandre

3、liabilityNoisemeasurelTtentforcharaeterizationthereliabilityofelectronicdeviceshasbeenawiderangeofresearchandapplicationinworldwideSomeconventionalelectroniccomponentsnoisemeasurementmethodisrelativelymaturesuchas：MOSFET

4、，Optocouplerfilmandthick—filmresistance，polycrystallinesemiconductormaterialsHowevertherestillhavealotofnoisemeasurementunresolvedisSues，suchas：verylowresistance(metalcontact)，dielectricmaterials(capacitors)，theminimumcu

5、rrent(antipartialsemiconductorjunction)andthegreatcurrent(powerdevice)，andsoollThisPaperstudyondielectricmaterials(capacitors)noisemeasurementproblem，mainlycompletedthefollowingwork：1Detailedanalysisofthetraditionalnoise

6、measurementwhyfailedinmeasBredielectricmaterials(capacitors)，andthrou豳in—depthstudythenoisemeasureandcharacterizationtechnologydesignedandachievecurrentnoisemeasuresystems2IntheultrathinSi02gatedielectriclayerleakagecurr

7、entnoisemeasurementswefoundinsmallstressconditionsthenoisespectrumshowinga，fnoisecharacteristics，andthenoiseincreasewithvoltagestressgrowinginlargervoltagestress，observedthestress—inducedleakagecurrent，andfoundRTSnoisein

8、thestressinducedeakagecurrent。3ByanalysistheRTSnoisesignalintime／frequencydomain，wefoundthatthetrap—assistedtunnelingistheresoncausedRTSnoisestressproducedtheSi02layerofsiliconspacetraps，whichtrapandemittingelectronicsca

9、usedtheRTSnoise；andwealsofoundthesiliconvacancytrapsintheSi02layerassociatewithvoltagestressWhenincreaseofvoltagestressthenumberoftrapswillalsobeincreased4Wealsomeasurenoiseinsolidtantalumelectrolyticcapacitorsbythismeth